POWER FIELD-EFFECT TRANSISTOR, 1
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
FET Feature: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | - |
Operating Temperature: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSD235NH6327XTSA1IR (Infineon Technologies) |
MOSFET 2N-CH 20V 0.95A SOT363 |
|
PMCPB5530X,115Nexperia |
MOSFET N/P-CH 20V 6HUSON |
|
BSO303PHXUMA1Rochester Electronics |
7A, 30V, 0.021OHM, 2-ELEMENT, P |
|
IRF7328PBFRochester Electronics |
IRF7328 - 20V-250V P-CHANNEL POW |
|
DMC3730UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
ALD111933PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
ALD210814PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
EFC6602R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
HUFA76407DK8TRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIA527DJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 12V 4.5A SC-70-6 |
|
FDS8858CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC |
|
SSM6P36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
SLA5068 LF853Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 7A 15-SIP |