HEATSINK 25X25X10MM L-TAB T766
MOSFET 2N-CH 10.6V 8DIP
RF SHIELD 1" X 1.5" THROUGH HOLE
CABLE RESOLVER FOR RS15W 5M
Type | Description |
---|---|
Series: | EPAD® |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | 500Ohm @ 5.9V |
Vgs(th) (Max) @ Id: | 3.35V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ALD210814PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
EFC6602R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
HUFA76407DK8TRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIA527DJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 12V 4.5A SC-70-6 |
|
FDS8858CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC |
|
SSM6P36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
SLA5068 LF853Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 7A 15-SIP |
|
SSM6N36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.5A ES6 |
|
DMC1029UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 12V 6UDFN |
|
SP8M51FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET |
|
AUIRF7316QTRIR (Infineon Technologies) |
MOSFET 2P-CH 30V 4.9A 8SOIC |
|
DMN2025UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
FDMS3686SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A POWER56 |