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EPC2101

EPC2101

GAN TRANS ASYMMETRICAL HALF BRID

EPC2101

EPC2101

Image is for reference, please contact us to get the real picture

Part No :

EPC2101

Manufacturer
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10714 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
EPC2101 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
Rds On (Max) @ Id, Vgs:11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs:2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 30V, 1200pF @ 30V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
EPC2101 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2101 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2101 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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