SMALL SIGNAL FIELD-EFFECT TRANSI
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 20V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIZ342ADT-T1-GE3Vishay / Siliconix |
MOSFET DL N-CH 30V PPAIR 3 X 3 |
|
FDWS9420-F085Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
QS8J2TRROHM Semiconductor |
MOSFET 2P-CH 12V 4A TSMT8 |
|
DMHC3025LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 30V 8SO |
|
CAB450M12XM3Wolfspeed - a Cree company |
1.2KV 450A SIC HALF BRIDGE MOD |
|
EFC6612R-A-TFRochester Electronics |
MOSFET 2N-CH 20V 23A EFCP |
|
SSD2007ATFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD2105LTBGRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SI4936CDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.8A 8-SOIC |
|
SQJB60EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
QH8JC5TCRROHM Semiconductor |
-60V DUAL PCH+PCH SMALL SIGNAL M |
|
FX20KMJ-3#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
NVMFD5C650NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 111A S08FL |