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NTLJD2105LTBG

NTLJD2105LTBG

P-CHANNEL POWER MOSFET

NTLJD2105LTBG

NTLJD2105LTBG

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Part No :

NTLJD2105LTBG

Manufacturer
Rochester Electronics
Description
P-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
44912 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
NTLJD2105LTBG PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Standard
Drain to Source Voltage (Vdss):8V
Current - Continuous Drain (Id) @ 25°C:2.5A
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:520mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-WDFN Exposed Pad
Supplier Device Package:6-WDFN (2x2)
NTLJD2105LTBG is available at GangBo-ic.com, Please review product page below for detailed information, including NTLJD2105LTBG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTLJD2105LTBG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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