MOSFET 2N-CH 10.6V 0.08A 8SOIC
Type | Description |
---|---|
Series: | EPAD®, Zero Threshold™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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