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FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1

MOSFET MODULE 1200V 200A

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FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1

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Part No :

FF6MR12W2M1B11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET MODULE 1200V 200A
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
340234 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Current - Continuous Drain (Id) @ 25°C:200A (Tj)
Rds On (Max) @ Id, Vgs:5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id:5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:14700pF @ 800V
Power - Max:20mW (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY2BM-2
FF6MR12W2M1B11BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FF6MR12W2M1B11BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FF6MR12W2M1B11BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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