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NTJD1155LT1G

NTJD1155LT1G

MOSFET N/P-CH 8V 1.3A SOT363

NTJD1155LT1G

NTJD1155LT1G

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Part No :

NTJD1155LT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N/P-CH 8V 1.3A SOT363
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
640064 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 17 - Feb 21 2025
PDF
NTJD1155LT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Standard
Drain to Source Voltage (Vdss):8V
Current - Continuous Drain (Id) @ 25°C:1.3A
Rds On (Max) @ Id, Vgs:175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:400mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
NTJD1155LT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTJD1155LT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTJD1155LT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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