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SIA519EDJ-T1-GE3

SIA519EDJ-T1-GE3

MOSFET N/P-CH 20V 4.5A SC70-6

SIA519EDJ-T1-GE3

SIA519EDJ-T1-GE3

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Part No :

SIA519EDJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N/P-CH 20V 4.5A SC70-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
154982 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SIA519EDJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.5A
Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:350pF @ 10V
Power - Max:7.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual
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