MOSFET 5P-CH 60V 5A 12-SIP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | 5 P-Channel, Common Source |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Rds On (Max) @ Id, Vgs: | 220mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 10V |
Power - Max: | 5W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 12-SIP |
Supplier Device Package: | 12-SIP w/fin |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
QH8JB5TCRROHM Semiconductor |
-40V DUAL PCH+PCH SMALL SIGNAL M |
|
MCH6664-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 30V 1.5A SOT363 |
|
EPC2110EPC |
GANFET 2NCH 120V 3.4A DIE |
|
FDPC5018SGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V PWRCLIP56 |
|
SI4931DY-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 12V 6.7A 8SOIC |
|
IRF7341PBFRochester Electronics |
HEXFET POWER MOSFET |
|
ECH8653-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FDMS3660ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/30A 8QFN |
|
ALD110808APCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
NTMD3P03R2Rochester Electronics |
P-CHANNEL MOSFET |
|
APTM100H45STGRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 18A SP4 |
|
CMLDM8005 TR PBFREECentral Semiconductor |
MOSFET 2P-CH 20V 0.65A SOT563 |
|
ECH8693R-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 14A SOT28 |