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IRF7341PBF

IRF7341PBF

HEXFET POWER MOSFET

IRF7341PBF

IRF7341PBF

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Part No :

IRF7341PBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
069906 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IRF7341PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:4.7A
Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:740pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF7341PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7341PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7341PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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