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IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

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IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

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Part No :

IPG20N10S4L35ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14427 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPG20N10S4L35ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1105pF @ 25V
Power - Max:43W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
IPG20N10S4L35ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG20N10S4L35ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG20N10S4L35ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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