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SI3900DV-T1-GE3

SI3900DV-T1-GE3

MOSFET 2N-CH 20V 2A 6-TSOP

SI3900DV-T1-GE3

SI3900DV-T1-GE3

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Part No :

SI3900DV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 2A 6-TSOP
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14769 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI3900DV-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2A
Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:830mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
SI3900DV-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI3900DV-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI3900DV-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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