GANFET 2 N-CH 30V 9.5A/38A DIE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 40A (Ta) |
Rds On (Max) @ Id, Vgs: | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 4mA, 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 15V, 19nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: | 475pF @ 15V, 1960pF @ 15V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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