MOSFET 2N-CH 75V 120A I4-PAC-5
Type | Description |
---|---|
Series: | HiPerFET™, TrenchT2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 120A |
Rds On (Max) @ Id, Vgs: | 5.8mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
Power - Max: | 170W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | ISOPLUSi5-Pak™ |
Supplier Device Package: | ISOPLUS i4-PAC™ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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