MOSFET N/P-CH 30V 8.5A/7A 8-SO
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A, 7A |
Rds On (Max) @ Id, Vgs: | 21mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 767pF @ 10V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
US6J2TRROHM Semiconductor |
MOSFET 2P-CH 20V 1A TUMT6 |
|
FDC6321CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 25V SSOT-6 |
|
SIS990DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 100V 12.1A 1212-8 |
|
CMS25NN03V8-HFComchip Technology |
MOSFET N-CH 30VDS 20VGS 25A PDFN |
|
APTM20TAM16FPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 200V 104A SP6-P |
|
SIA906EDJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 4.5A SC70-6 |
|
FF11MR12W1M1B11BOMA1IR (Infineon Technologies) |
MOSFET 2N-CH 1200V 100A MODULE |
|
DMTH4014LPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V-40V POWERDI506 |
|
SI4214DDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8.5A 8SO |
|
AUIRFN8458TRIR (Infineon Technologies) |
MOSFET 2N-CH 40V 43A 8PQFN |
|
SH8K2TB1ROHM Semiconductor |
MOSFET 2N-CH 30V 6A SOP8 |
|
FQS4903TFSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 500V 0.37A 8SOP |
|
US6M2TRROHM Semiconductor |
MOSFET N/P-CH 30V/20V TUMT6 |