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FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V 100A MODULE

FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

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Part No :

FF11MR12W1M1B11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 1200V 100A MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
339533 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FF11MR12W1M1B11BOMA1 PDF
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A
Rds On (Max) @ Id, Vgs:11mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs:250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:7950pF @ 800V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
FF11MR12W1M1B11BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FF11MR12W1M1B11BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FF11MR12W1M1B11BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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