MOSFET 2N-CH 20V 6A 1212-8
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 10V |
Power - Max: | 17.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 1212-8 Dual |
Supplier Device Package: | PowerPAK® 1212-8 Dual |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPG20N10S436AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
SI4618DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
FDS6898AZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC |
|
SH8K3TB1ROHM Semiconductor |
MOSFET 2N-CH 30V 7A SOP8 |
|
FDS9958-F085Rochester Electronics |
DUAL P-CHANNEL POWER TRENCH MOSF |
|
TPC8223-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 9A 8SOP |
|
ALD310708PCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16DIP |
|
FDS6875Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 6A 8SOIC |
|
EPC2105EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
|
FW216A-TL-2WXRochester Electronics |
N CHANNEL POWER MOSFET |
|
DMP56D0UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 50V 0.16A SOT563 |
|
SI4505DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V/8V 8-SOIC |
|
AOC2804BAlpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 4DFN |