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EPC2105

EPC2105

GAN TRANS ASYMMETRICAL HALF BRID

EPC2105

EPC2105

Image is for reference, please contact us to get the real picture

Part No :

EPC2105

Manufacturer
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10554 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
EPC2105 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
Rds On (Max) @ Id, Vgs:14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id:2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 40V, 1100pF @ 40V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
EPC2105 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2105 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2105 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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