1.2KV, 425A SWITCHING LOSS OPTIM
Type | Description |
---|---|
Series: | CAB425M12XM3 |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 450A |
Rds On (Max) @ Id, Vgs: | 4.2mOhm @ 425A, 15V |
Vgs(th) (Max) @ Id: | 3.6V @ 115mA |
Gate Charge (Qg) (Max) @ Vgs: | 1135nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: | 30.7nF @ 800V |
Power - Max: | 50mW |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMC1029UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 12V 6UDFN |
|
AON4803Alpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 20V 3.4A DFN3X2 |
|
CSD87355Q5DTexas Instruments |
MOSFET 2N-CH 30V 8LSON |
|
FS50KM-06#B00Rochester Electronics |
DISCRETE / POWER MOSFET |
|
NVLJD4007NZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 245MA 6WDFN |
|
IRF7351TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 60V 8A 8-SOIC |
|
ZXMP3A16DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 4.2A 8-SOIC |
|
BSG0811NDATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/41A 8TISON |
|
NX3008CBKV,115Nexperia |
MOSFET N/P-CH 30V SOT666 |
|
SI7904BDN-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 6A 1212-8 |
|
IPG20N10S436AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
SI4618DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
FDS6898AZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC |