BIPOLAR GEN PURPOSE TRANSISTOR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800 mA |
Voltage - Collector Emitter Breakdown (Max): | 25 V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100mA, 1V |
Power - Max: | 310 mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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