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NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

TRANS NPN DARL 100V 8A DPAK

NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

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Part No :

NJVMJD122T4G-VF01

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 100V 8A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Availability
070007 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
NJVMJD122T4G-VF01 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 8A, 80mA
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD122T4G-VF01 is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD122T4G-VF01 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD122T4G-VF01 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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