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MJE200G

MJE200G

POWER BIPOLAR TRANSISTOR, 5A, 40

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MJE200G

MJE200G

Image is for reference, please contact us to get the real picture

Part No :

MJE200G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 5A, 40
Catalog
Transistors - Bipolar (BJT) - Single
Availability
206755 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
MJE200G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
Power - Max:15 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-225AA
MJE200G is available at GangBo-ic.com, Please review product page below for detailed information, including MJE200G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJE200G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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