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NSS35200CF8T1G

NSS35200CF8T1G

35 V, 7 A, VCE PNP TRANSISTOR

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NSS35200CF8T1G

NSS35200CF8T1G

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Part No :

NSS35200CF8T1G

Manufacturer
Rochester Electronics
Description
35 V, 7 A, VCE PNP TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
342897 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 09 - Nov 13 2025
PDF
NSS35200CF8T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):35 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 20mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1.5A, 2V
Power - Max:635 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:ChipFET™
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