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NJVNJD35N04T4G

NJVNJD35N04T4G

TRANS NPN DARL 350V 4A DPAK-4

NJVNJD35N04T4G

NJVNJD35N04T4G

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Part No :

NJVNJD35N04T4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 350V 4A DPAK-4
Catalog
Transistors - Bipolar (BJT) - Single
Availability
666566 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
NJVNJD35N04T4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 2A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
Power - Max:45 W
Frequency - Transition:90MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVNJD35N04T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVNJD35N04T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVNJD35N04T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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