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2N5550/D26Z

2N5550/D26Z

NPN EPITAXIAL SILICON TRANSISTOR

2N5550/D26Z

2N5550/D26Z

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Part No :

2N5550/D26Z

Manufacturer
Rochester Electronics
Description
NPN EPITAXIAL SILICON TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
24000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):140 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
2N5550/D26Z is available at GangBo-ic.com, Please review product page below for detailed information, including 2N5550/D26Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N5550/D26Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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