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MJD112-1G

MJD112-1G

POWER BIPOLAR TRANSISTOR, 2A, 10

MJD112-1G

MJD112-1G

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Part No :

MJD112-1G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 2A, 10
Catalog
Transistors - Bipolar (BJT) - Single
Availability
1238585 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
MJD112-1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:1.75 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
MJD112-1G is available at GangBo-ic.com, Please review product page below for detailed information, including MJD112-1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD112-1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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