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NJVMJD122T4G

NJVMJD122T4G

POWER BIPOLAR TRANSISTOR, 8A, 10

NJVMJD122T4G

NJVMJD122T4G

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Part No :

NJVMJD122T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 8A, 10
Catalog
Transistors - Bipolar (BJT) - Single
Availability
12315 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD122T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD122T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD122T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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