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BCR119E6327HTSA1

BCR119E6327HTSA1

BCR11 - NPN SILICON DIGITAL TRAN

BCR119E6327HTSA1

BCR119E6327HTSA1

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Part No :

BCR119E6327HTSA1

Manufacturer
Rochester Electronics
Description
BCR11 - NPN SILICON DIGITAL TRAN
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
33000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BCR119E6327HTSA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:150 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
BCR119E6327HTSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BCR119E6327HTSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BCR119E6327HTSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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