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NSVDTC144EM3T5G

NSVDTC144EM3T5G

NPN BIPOLAR DIGITAL TRANSISTOR (

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NSVDTC144EM3T5G

NSVDTC144EM3T5G

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Part No :

NSVDTC144EM3T5G

Manufacturer
Rochester Electronics
Description
NPN BIPOLAR DIGITAL TRANSISTOR (
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
32000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
NSVDTC144EM3T5G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:260 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
NSVDTC144EM3T5G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVDTC144EM3T5G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVDTC144EM3T5G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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