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MMBTH10LT1G

MMBTH10LT1G

RF SMALL SIGNAL BIPOLAR TRANSIST

MMBTH10LT1G

MMBTH10LT1G

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Part No :

MMBTH10LT1G

Manufacturer
Rochester Electronics
Description
RF SMALL SIGNAL BIPOLAR TRANSIST
Catalog
Transistors - Bipolar (BJT) - RF
Availability
2375455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
MMBTH10LT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):25V
Frequency - Transition:650MHz
Noise Figure (dB Typ @ f):-
Gain:-
Power - Max:225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 4mA, 10V
Current - Collector (Ic) (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
MMBTH10LT1G is available at GangBo-ic.com, Please review product page below for detailed information, including MMBTH10LT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MMBTH10LT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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