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MT3S113TU,LF

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MT3S113TU,LF

MT3S113TU,LF

Image is for reference, please contact us to get the real picture

Part No :

MT3S113TU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 5.3V 11.2GHZ UFM
Catalog
Transistors - Bipolar (BJT) - RF
Availability
15800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
MT3S113TU,LF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.3V
Frequency - Transition:11.2GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:12.5dB
Power - Max:900mW
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Supplier Device Package:UFM
MT3S113TU,LF is available at GangBo-ic.com, Please review product page below for detailed information, including MT3S113TU,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT3S113TU,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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