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BFR360L3E6765

BFR360L3E6765

LOW-NOISE SI TRANSISTOR

BFR360L3E6765

BFR360L3E6765

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Part No :

BFR360L3E6765

Manufacturer
Rochester Electronics
Description
LOW-NOISE SI TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - RF
Availability
105333 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):9V
Frequency - Transition:14GHz
Noise Figure (dB Typ @ f):1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain:11.5dB ~ 16dB
Power - Max:210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 15mA, 3V
Current - Collector (Ic) (Max):35mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-101, SOT-883
Supplier Device Package:PG-TSLP-3-1
BFR360L3E6765 is available at GangBo-ic.com, Please review product page below for detailed information, including BFR360L3E6765 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BFR360L3E6765 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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