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MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

Image is for reference, please contact us to get the real picture

Part No :

MT3S111P(TE12L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 6V 8GHZ PW-MINI
Catalog
Transistors - Bipolar (BJT) - RF
Availability
17857 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
MT3S111P(TE12L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):1.25dB @ 1GHz
Gain:10.5dB
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI
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