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NSV60100DMTWTBG

NSV60100DMTWTBG

DUAL TRANSISTOR PNP

GA0805A330FXBBC31G

GA0805A330FXBBC31G

CAP CER 33PF 100V C0G/NP0 0805

NSV60100DMTWTBG

NSV60100DMTWTBG

Image is for reference, please contact us to get the real picture

Part No :

NSV60100DMTWTBG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
DUAL TRANSISTOR PNP
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NSV60100DMTWTBG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):1A
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:300mV @ 100mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:2.27W
Frequency - Transition:155MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-WDFN Exposed Pad
Supplier Device Package:6-WDFN (2x2)
NSV60100DMTWTBG is available at GangBo-ic.com, Please review product page below for detailed information, including NSV60100DMTWTBG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSV60100DMTWTBG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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