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NJX1675PDR2G

NJX1675PDR2G

POWER BIPOLAR TRANSISTOR, PNP

NJX1675PDR2G

NJX1675PDR2G

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Part No :

NJX1675PDR2G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, PNP
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
239921 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
NJX1675PDR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):3A
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
Power - Max:2W
Frequency - Transition:100MHz, 120MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NJX1675PDR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NJX1675PDR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJX1675PDR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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  • NJX1675PDR2G Price
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