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SG73P1JTTD28R7F

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NSVEMD4DXV6T5G

NSVEMD4DXV6T5G

TRANS NPN/PNP DUAL BRT SOT563

NSVEMD4DXV6T5G

NSVEMD4DXV6T5G

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Part No :

NSVEMD4DXV6T5G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN/PNP DUAL BRT SOT563
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
104000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
NSVEMD4DXV6T5G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms, 10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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