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NSVB123JPDXV6T1G

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Part No :: NSVB123JPDXV6T1G

Manufacturer: Rochester Electronics

Description: SMALL SIGNAL BIPOLAR TRANSISTOR

Catalog: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Availability: 52000 pieces

Shipped from: HK warehouse

Expected Shipping Date: Feb 25 - Mar 01 2025

PDF: NSVB123JPDXV6T1G PDF

Type	Description
Series:	-
Package:	Bulk
Part Status:	Obsolete
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2kOhms
Resistor - Emitter Base (R2):	4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	500mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

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