NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE
IC TRNSLTR BIDIRECTIONAL 8UDFN
MEDIUM - HIGH PERF SNGL STAGE PW
LM13 INTENSITY MODULATOR, 650-10
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7kOhms |
Resistor - Emitter Base (R2): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz, 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
RN2971(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS 2PNP PREBIAS 0.2W US6 |
![]() |
RN2910,LF(CTToshiba Electronic Devices and Storage Corporation |
PNPX2 BRT Q1BSR4.7KOHM Q1BERINF. |
![]() |
RN4905,LF(CTToshiba Electronic Devices and Storage Corporation |
TRANS NPN/PNP PREBIAS 0.2W US6 |
![]() |
NSBC114EPDXV6T5GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN/PNP 50V SOT563 |
![]() |
PUMB2FNexperia |
PUMB2/SOT363/SC-88 |
![]() |
NSBA115EDXV6T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2PNP 50V SOT563 |
![]() |
RN1902T5LFTToshiba Electronic Devices and Storage Corporation |
TRANS 2NPN PREBIAS 0.2W US6 |
![]() |
IMD2AT108ROHM Semiconductor |
TRANS NPN/PNP PREBIAS 0.3W SMT6 |
![]() |
NHUMD10XNexperia |
NHUMD10/SOT363/SC-88 |
![]() |
FMA3AT148ROHM Semiconductor |
TRANS PREBIAS DUAL PNP SMT5 |
![]() |
DMA9610F0RPanasonic |
TRANS PREBIAS DUAL PNP SSMINI5 |
![]() |
DMC562050RPanasonic |
TRANS 2NPN PREBIAS 0.15W SMINI5 |
![]() |
UMD3NTRROHM Semiconductor |
TRANS NPN/PNP PREBIAS 0.15W UMT6 |