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IMD2AT108

IMD2AT108

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Part No :

IMD2AT108

Manufacturer
ROHM Semiconductor
Description
TRANS NPN/PNP PREBIAS 0.3W SMT6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
124412 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IMD2AT108 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SMT6
IMD2AT108 is available at GangBo-ic.com, Please review product page below for detailed information, including IMD2AT108 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IMD2AT108 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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