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RN1708JE(TE85L,F)

RN1708JE(TE85L,F)

NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4

RN1708JE(TE85L,F)

RN1708JE(TE85L,F)

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Part No :

RN1708JE(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
13900 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-553
Supplier Device Package:ESV
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