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NSVMUN5111DW1T3G

NSVMUN5111DW1T3G

SMALL SIGNAL BIPOLAR TRANSISTOR,

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NSVMUN5111DW1T3G

NSVMUN5111DW1T3G

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Part No :

NSVMUN5111DW1T3G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
15745 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NSVMUN5111DW1T3G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
NSVMUN5111DW1T3G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVMUN5111DW1T3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVMUN5111DW1T3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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