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NSVBC114EDXV6T1G

NSVBC114EDXV6T1G

TRANS 2NPN BIAS BIPOLAR SOT563

NSVBC114EDXV6T1G

NSVBC114EDXV6T1G

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Part No :

NSVBC114EDXV6T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 2NPN BIAS BIPOLAR SOT563
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
233623 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NSVBC114EDXV6T1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
NSVBC114EDXV6T1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVBC114EDXV6T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVBC114EDXV6T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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