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NSM21356DW6T1G

NSM21356DW6T1G

SMALL SIGNAL BIPOLAR TRANSISTOR

NSM21356DW6T1G

NSM21356DW6T1G

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Part No :

NSM21356DW6T1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
321000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
NSM21356DW6T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V, 65V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 220 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:230mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
NSM21356DW6T1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSM21356DW6T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSM21356DW6T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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