DIODE ZENER 9.1V 3.2W POWERMITE
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 9.1 V |
Tolerance: | ±5% |
Power - Max: | 3.2 W |
Impedance (Max) (Zzt): | 4 Ohms |
Current - Reverse Leakage @ Vr: | 5 µA @ 7 V |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 200 mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
1N5937BPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W DO204AL |
![]() |
BZV90-C7V5115Rochester Electronics |
DIODE ZENER 75V 1.5W 5% UNIDIR |
![]() |
JAN1N3045BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
![]() |
JANTX1N3044BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 100V 1W DO213AB |
![]() |
BZV90-C3V0115Rochester Electronics |
DIODE ZENER 36V 1.5W 5% UNI |
![]() |
BZT52C56-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 410MW SOD123 |
![]() |
JAN1N758D-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 500MW DO35 |
![]() |
SZMMSZ5233BT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6V 500MW SOD123 |
![]() |
BZD27C11P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 800MW DO219AB |
![]() |
BZT52C39S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 39V 200MW SOD323F |
![]() |
SMBJ5933B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 22V 2W SMBJ |
![]() |
JAN1N4626CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO213AA |
![]() |
JAN1N753DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |