DIODE ZENER 33V 1.5W DO204AL
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33 V |
Tolerance: | ±5% |
Power - Max: | 1.5 W |
Impedance (Max) (Zzt): | 33 Ohms |
Current - Reverse Leakage @ Vr: | 1 µA @ 25.1 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 200 mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BZV90-C7V5115Rochester Electronics |
DIODE ZENER 75V 1.5W 5% UNIDIR |
|
JAN1N3045BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
JANTX1N3044BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 100V 1W DO213AB |
|
BZV90-C3V0115Rochester Electronics |
DIODE ZENER 36V 1.5W 5% UNI |
|
BZT52C56-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 410MW SOD123 |
|
JAN1N758D-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 500MW DO35 |
|
SZMMSZ5233BT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6V 500MW SOD123 |
|
BZD27C11P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 800MW DO219AB |
|
BZT52C39S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 39V 200MW SOD323F |
|
SMBJ5933B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 22V 2W SMBJ |
|
JAN1N4626CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO213AA |
|
JAN1N753DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
YFZVFHTR10BROHM Semiconductor |
DIODE ZENER 9.66V 500MW TUMD2M |