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JAN1N5809US

JAN1N5809US

DIODE GEN PURP 100V 6A B-MELF

JAN1N5809US

JAN1N5809US

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Part No :

JAN1N5809US

Manufacturer
Roving Networks / Microchip Technology
Description
DIODE GEN PURP 100V 6A B-MELF
Catalog
Diodes - Rectifiers - Single
Availability
220722 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
JAN1N5809US PDF
Type Description
Series:Military, MIL-PRF-19500/477
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
JAN1N5809US is available at GangBo-ic.com, Please review product page below for detailed information, including JAN1N5809US price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for JAN1N5809US to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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