Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | - |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | - |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-50PF40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 50A DO203AB |
|
SET121219Semtech |
DIODE GEN PURP 1KV 20A MODULE |
|
JANTX1N6642UB2RRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA UB2 |
|
S12GGeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
|
D1030N26TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.6KV 1030A |
|
PMEG2005AEAFNexperia |
DIODE SCHOTTKY 20V 500MA SOD323 |
|
JANTX1N6077Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 1.3A AXIAL |
|
ES1BWF-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 10 |
|
F1T2GHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
EGP31G-E3/CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
JTX1N5621Semtech |
D MET 1A FAST 800V HR |
|
UF3003-HFComchip Technology |
DIODE GEN PURP 200V 3A DO201AA |
|
6A40GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 6A R-6 |