DIODE SCHOTTKY 35V 35A DO4
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 35 V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 680 mV @ 35 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 1.5 mA @ 20 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BYG10GHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A DO214 |
![]() |
RB521S30YLNexperia |
RB521S30/SOD523/SC-79 |
![]() |
A115FRochester Electronics |
RECTIFIER DIODE, 3A, 50V |
![]() |
R42160TSRoving Networks / Microchip Technology |
RECTIFIER |
![]() |
JTX1N4948Semtech |
D MET 1A FAST 1KV |
![]() |
JAN1N6641USRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 300MA B-MELF |
![]() |
HT16G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A TS-1 |
![]() |
RU 2AMVSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 1.1A AXIAL |
![]() |
JTX1N5417Semtech |
D MET 3A FAST 200V HR |
![]() |
HSM890GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 90V 8A DO215AB |
![]() |
BYC75W-1200PQWeEn Semiconductors Co., Ltd |
STANDARD MARKING * HORIZONTAL, R |
![]() |
1N4255Roving Networks / Microchip Technology |
RECTIFIER DIODE |
![]() |
1N5617E3Roving Networks / Microchip Technology |
RECTIFIER |