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BZT52B13-E3-08

BZT52B13-E3-08

DIODE ZENER 13V 410MW SOD123

JAN1N6641US

JAN1N6641US

DIODE GEN PURP 50V 300MA B-MELF

JAN1N6641US

JAN1N6641US

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Part No :

JAN1N6641US

Manufacturer
Roving Networks / Microchip Technology
Description
DIODE GEN PURP 50V 300MA B-MELF
Catalog
Diodes - Rectifiers - Single
Availability
880288 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
JAN1N6641US PDF
Type Description
Series:Military, MIL-PRF-19500/609
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):300mA
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 300 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 175°C
JAN1N6641US is available at GangBo-ic.com, Please review product page below for detailed information, including JAN1N6641US price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for JAN1N6641US to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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